Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic

Luo, J.K.; Thomas, H.
June 1994
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3614
Academic Journal
Investigates the post-growth annealing effects on the electrical properties of low temperature (LT)-GaAs grown by molecular beam epitaxy. Reasons for the increase of resistivity of LT-GaAs; Correlation between cluster density, cluster size, and annealing temperature; Formation of arsenic clusters after annealing.


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