TITLE

Simulations for the high-speed response of GaN metal-semiconductor-metal photodetectors

AUTHOR(S)
Joshi, R.P.; Dharamsi, A.N.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3611
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Performs a Monte Carlo simulation of a simple gallium nitride (GaN) metal-semiconductor-metal photodetector. Computation of the steady-state peak electron velocity for GaN; Implications of larger photoabsorption depths for photodetector performance; Provisions of the Monte Carlo calculation.
ACCESSION #
4278305

 

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