Energy band lineup at the porous-silicon/silicon heterointerface measured by electron spectroscopy

Hao, P.H.; Hou, X.Y.
June 1994
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3602
Academic Journal
Measures the energy band gap of light-emitting porous silicon by high-resolution electron energy loss spectroscopy (HREELS). Technical difficulties of the methods used for semiconductor heterojunction systems; Purpose of developing the HREELS technique; Interference of surface oxidation on the HREELS and ultraviolet photoelectron spectroscopy.


Related Articles

  • Complete three-dimensional band gap in macroporous silicon photonic crystals. Leonard, S. W. // Applied Physics Letters;10/14/2002, Vol. 81 Issue 16, p2917 

    The prospect of obtaining a complete three-dimensional band gap in macroporous silicon photonic crystals is investigated theoretically. Band structure calculations indicate that a modified form of the simple cubic lattice of air spheres in silicon exhibits a complete band gap, with a bandwidth...

  • Bandgap determination of P(VDF-TrFE) copolymer film by electron energy loss spectroscopy. Mandal, Dipankar; Henkel, K.; Müller, K.; Schmeißer, D. // Bulletin of Materials Science;2010, Vol. 33 Issue 4, p457 

    The ferroelectric β of poly(vinylidene fluoride trifluoroethylene), P(VDF-TrFE) is confirmed for 100 nm thickness spin coated copolymer film. The homogeneous coverage of the copolymer film is investigated by the help of X-ray photoelectron spectroscopy (XPS). Most importantly, the existing...

  • Electron energy-loss spectroscopy study of MgH2 in the plasmon energy range. Paik, B.; Walton, A.; Mann, V.; Book, D.; Jones, I. P.; Harris, I. R. // Applied Physics Letters;5/7/2012, Vol. 100 Issue 19, p193902 

    Electron energy loss spectroscopy of MgH2 in the plasmon energy range is reported here as a part of a study to determine the dielectric function of this hydride. From the dielectric function, we have estimated the unperturbed plasmon energy of MgH2 as 11.34 eV. Interband transitions are also...

  • Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics. King, Sean W.; Paquette, Michelle M.; Otto, Joseph W.; Caruso, A. N.; Brockman, Justin; Bielefeld, Jeff; French, Marc; Kuhn, Markus; French, Benjamin // Applied Physics Letters;3/10/2014, Vol. 104 Issue 10, p1 

    To facilitate the design of heterostructure devices employing hexagonal/sp² boron nitride, x-ray photoelectron spectroscopy has been utilized in conjunction with prior reflection electron energy loss spectroscopy measurements to determine the valence and conduction band offsets (VBOs and...

  • Comprehensive studies of the electronic structure of pristine and potassium doped chrysene investigated by electron energy-loss spectroscopy. Roth, Friedrich; Mahns, Benjamin; Schönfelder, Ronny; Hampel, Silke; Nohr, Markus; Büchner, Bernd; Knupfer, Martin // Journal of Chemical Physics;9/21/2012, Vol. 137 Issue 11, p114508 

    We have performed electron energy-loss spectroscopy studies in order to investigate the electronic properties of chrysene molecular solids. The valence band electronic excitation spectra and the C 1s core level excitations have been measured for pristine and potassium doped chrysene. The core...

  • Band gap and electronic structure of MgSiN2. Quirk, J. B.; Råsander, M.; McGilvery, C. M.; Palgrave, R.; Moram, M. A. // Applied Physics Letters;9/15/2014, Vol. 105 Issue 11, p1 

    Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN2 is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN2 (indirect) and AlN (direct) using the...

  • Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra. Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R. // Journal of Chemical Physics;2015, Vol. 143 Issue 10, p1 

    Reflection electron energy loss spectra from some insulating materials (CaCO3, Li2CO3, and SiO2) taken at relatively high incoming electron energies (5-40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the...

  • In situ photoluminescence spectral study of porous Si in HF aqueous solution. Wadayama, T.; Yamamoto, S. // Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1653 

    Measures time-dependent change in the visible luminescence of porous silicon immersed in high frequency aqueous solution. Exhibition of the shifting of the porous silicon photoluminescence band to shorter wavelength; Reduction of the peak intensity; Relationship of the size of the silicon...

  • Photoelectron spectroscopy measurements of the band gap in porous silicon. van Buuren, T.; Tiedje, T.; Dahn, J.R.; Way, B.M. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2911 

    Measures the conduction and valence band gap energies of porous silicon (Si). Use of x-ray absorption and photoemission spectroscopy; Comparison of results with the quantum confinement model for the optical properties of porous Si; Absence of oxygen in the as-prepared materials.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics