TITLE

High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

AUTHOR(S)
Yao, Z.-Q.; Harrison, H.B.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3584
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes high quality ultrathin dielectric films grown in a nitric oxide ambient using rapid thermal processing. Determination of the distribution of nitrogen concentration in the dielectric films; Correlation between high nitrogen concentration at the interface and reduction of the dielectric growth rate; Growth rate of the dielectric film.
ACCESSION #
4278294

 

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