Sputter-induced formation of an electron accumulation layer in In[sub 0.52]Al[sub 0.48]As

Maslar, J.E.; Bohn, P.W.
June 1994
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3575
Academic Journal
Analyzes the sputter-induced formation of an electron accumulation layer in In[sub 0.52]Al[sub 0.48]As heterostructures. Utilization of indium-gallium arsenide (InGaAs)/indium-aluminum arsenide heterostructures; Ways to monitor the process-induced surface modification of GaAs and InP; Increase in near-surface carrier density.


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