TITLE

Epitaxial growth of SrTiO[sub 3]/YBa[sub 2]Cu[sub 3]O[sub 7-x] heterostructures by

AUTHOR(S)
Liang, S.; Chern, C.S.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3563
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the heteroepitaxial growth of SrTiO[sub 3] (STO) on YBa[sub 2]Cu[sub 3]O[sub 7-x] substrates by plasma-enhanced metalorganic chemical vapor deposition. Fabrication of multilayered heterostructures; Electrical properties of the STO films; Indications of the x-ray diffraction results.
ACCESSION #
4278287

 

Related Articles

  • Polycrystalline silicon-germanium films on oxide using plasma-enhanced very-low-pressure.... Tsai, Julie A.; Reif, Rafael // Applied Physics Letters;4/3/1995, Vol. 66 Issue 14, p1809 

    Examines the thermal properties of silicon-germanium thin films grown by plasma-enhanced chemical vapor deposition. Use of x-ray diffraction to observe grain texture; Details on the thermal growth and deposition rate of thin films; Application of silicon-germanium alloy materials to thin-film...

  • Ultrathin device quality oxide-nitride-oxide heterostructure formed by remote plasma enhanced.... Ma, Y.; Yasuda, T. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2226 

    Investigates the oxide-nitride-oxide (ONO) heterostructures formed by remote plasma enhanced chemical vapor deposition. Analysis of the heterostructure as a dielectric material in a field-effect transistor; Electrical properties of the ONO dielectrics; Approaches used in forming the ONO structures.

  • On the feasibility of growing dilute CxSi1-x epitaxial alloys. Posthill, J. B.; Rudder, R. A.; Hattangady, S. V.; Fountain, G. G.; Markunas, R. J. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p734 

    Dilute CxSi1-x epitaxial films have been grown on Si(100) by remote plasma-enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x-ray diffraction...

  • Diamond(001) single-domain 2x1 surface grown by chemical vapor deposition. Tsuno, Takashi; Tomikawa, Tadashi; Shikata, Shin-ichi; Imai, Takahiro; Fujimori, Naoji // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p572 

    Demonstrates the epitaxial growth of diamond films on an off-angle(001) substrate by microwave plasma assisted chemical vapor deposition. Use of low-energy electron diffraction and scanning tunneling microscopy; Synthesis of Ib-type single-crystal diamond substrate.

  • Selective Si epitaxial growth by plasma-enhanced chemical vapor deposition at very low temperature. Baert, K.; Deschepper, P. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p442 

    Describes the selective silicon epitaxial growth from SiH[sub 4] and SiF[sub 4] by plasma-enhanced chemical vapor deposition. Range of deposition temperature used in the study; Role of fluoride species for the selective epitaxial growth; Details on the carrier concentration and mobility of...

  • Silicon epitaxial growth at 300 degree C by plasma enhanced chemical vapor deposition from.... Cheng-Hsien Chen; Chi-Meen Wan; Tri-Rung Yew; Ming-Deng Shieh; Chung-Yuan Kung // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3126 

    Investigates the epitaxial growth of silicon by plasma enhanced chemical vapor deposition from SiH[sub 4]/hydrogen gas ([H[sub 2]). Ratio of H[sub 2] to SiH[sub 4]; Role of SiH[sub 4]/H[sub 2] flow rate and radio frequency power on epitaxial growth; Use of the spin etch method.

  • Epitaxial electro-optical Sr[sub x]Ba[sub 1-x]Nb[sub 2]O[sub 6] films by single-source.... Zhu, L.D.; Zhao, J. // Applied Physics Letters;9/25/1995, Vol. 67 Issue 13, p1836 

    Examines the epitaxial growth of Sr[sub x]Ba[sub 1-x]Nb[sub 2]O[sub 6] (SBN) films on MgO substrates by single source plasma enhanced chemical vapor deposition (PE-CVD) process. Preparation of SBN thin films; Compatibility of oxide thin films and CVD with high oxygen partial pressure;...

  • Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by.... Jiang-Huai Zhou; Ikuta, Kazuyuki // Applied Physics Letters;9/15/1997, Vol. 71 Issue 11, p1534 

    Investigates the growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates. Use of triode plasma-enhanced chemical vapor deposition; Ways to control the crystallinity on glass substrates; Difference between the triode system and a conventional diode system.

  • Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition. Hofmann, S.; Ducati, C.; Neill, R. J.; Piscanec, S.; Ferrari, A. C.; Geng, J.; Dunin-Borkowski, R. E.; Robertson, J. // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p6005 

    Silicon nanowires were selectively grown at temperatures below 400 °C by plasma enhanced chemical vapor deposition using silane as the Si source and gold as the catalyst. A detailed growth study is presented using electron microscopy, focused ion beam preparation, and Raman spectroscopy. A...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics