TITLE

Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based

AUTHOR(S)
Chelles, S.; Ferreira, R.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3530
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a polarization insensitive electroabsorption modulator based on strained indium-gallium arsenide (InGaAsP)/InGaAsP multiple quantum wells. Applications for in-line modulation and optical gating; Components of the undoped electroabsorbant core; Dependence of the Stark shift in a square quantum well on the carrier effective mass.
ACCESSION #
4278275

 

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