TITLE

Electrical properties of 1N4007 silicon diode

AUTHOR(S)
Nanda, K.K.; Sarangi, S.N.
PUB. DATE
July 1997
SOURCE
Review of Scientific Instruments;Jul97, Vol. 68 Issue 7, p2904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the electrical properties of 1N4007 silicon semiconductor diode. Forward voltage characteristics; Capacitance voltage measurements of p-n junctions; Estimated band gap.
ACCESSION #
4272771

 

Related Articles

  • Impact of the substrate on the low-frequency noise of silicon n[sup +] p junction diodes. Simoen, E.; Bosman, G. // Applied Physics Letters;5/8/1995, Vol. 66 Issue 19, p2507 

    Examines the effects of different silicon substrates on the low frequency noise characteristics of silicon n[sup +]p junction diodes. Fabrication procedures of silicon diodes; Results of low-frequency noise measurements; Analysis of noise-spectral density.

  • Ion-implanted charge collection contacts for high purity silicon detectors operated at 20 mK. Young, B.A. // Review of Scientific Instruments;Mar95, Vol. 66 Issue 3, p2625 

    Describes the design, fabrication and characterization of ion-implanted charge collection contacts for silicon hybrid detectors. Discussion of physical constraints on the general design of semiconductor hybrid detectors; Development of ionization collection contacts for cryogenic silicon detectors.

  • Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes. Nazarov, A. N.; Osiyuk, I. N.; Sun, J. M.; Yankov, R. A.; Skorupa, W.; Tyagulskii, I. P.; Lysenko, V. S.; Prucnal, S.; Gebel, T.; Rebohle, L. // Applied Physics B: Lasers & Optics;Mar2007, Vol. 87 Issue 1, p129 

    Combined measurements of charge trapping and electroluminescence intensity as a function of injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence (EL) quenching in Ge-implanted ITO-SiO2-Si light-emitting silicon diodes. Good...

  • Silicon avalanche photodiodes as detectors for photon correlation experiments Overbeck, Ekkehard; Sinn, Christian; Flammer, Ivo; Ricka, Jaro // Review of Scientific Instruments;Oct98, Vol. 69 Issue 10, p3515 

    Develops an electronic circuit for periodical gated quenching of silicon avalanche photodiodes. Comparisons between electric circuit device and commercially available passive and active quenching modules; Distortions of photocount correlation functions; Characterization of nonlinear behaviors;...

  • Efficient light emission at 1.54 μm from Er in Si excited by hot electron injection through thin suboxide layers. Markmann, M.; Sticht, A.; Bobe, F.; Zandler, G.; Brunner, K.; Abstreiter, G.; Mu¨ller, E. // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p9764 

    We studied the electroluminescence of Er:O-doped Si pn diodes and unipolar structures with thin SiO[sub 1.6] suboxide barriers, which were deposited by molecular-beam epitaxy. These suboxide layers reveal a barrier height of about 320 meV in the conduction band and therefore raise the average...

  • Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors. Eremin, V.; Poloskin, D. S.; Verbitskaya, E.; Vlasenko, M. P.; Vlasenko, L. S.; Laiho, R.; Niinikoski, T. O. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9659 

    Spin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon p-n junction detectors (diodes) formed on float-zone (FZ) silicon wafers. The main radiation defects, associated with...

  • Charge collection and thermalization in a composite calorimetric and ionization x-ray detector. Stahle, C. K.; Wouters, J.; Kelley, R. L.; Moseley, S. H.; Szymkowiak, A. E. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p3723 

    Focuses on a study which developed a combination calorimetric and ionization x-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Description of device and measurement apparatus; Diagram of calorimeter electronics and ionization detector electronics;...

  • Carrier lifetime measurements in 10 kV 4H-SiC diodes. Levinshtein, M.E.; Mnatsakanov, T.T.; Ivanov, P.A.; Singh, R.; Irvine, K.G.; Palmour, J.W. // Electronics Letters;4/17/2003, Vol. 39 Issue 8, p689 

    The minority carrier lifetime τ[sub p], has been measured by open circuit voltage decay (OCVD) and current recovery time (CRT) (or LaxNeustadter's) techniques in high-voltage (10 kV) 4H-SiC p[sup +] n[sub 0]n[sup +] diodes. The τ[sub p] value measured by OCVD is 1.55 µs at room...

  • Updating Power Electronics Technology. Davis, Sam // Power Electronics Technology;Jun2011, Vol. 37 Issue 6, p4 

    The article discusses various reports to be published in the July 2011 issue including one by Johan Strydon on the use of gallium nitride (GaN) in isolated converters, one by Deepak Veereddy and Eric Leiser on the launch of the 1200 volts/100 amperes Silicon 1GBT diode copack by GeneSiC and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics