Smooth etching of single crystal 6H-SiC in an electron cyclotron resonance plasma reactor

Flemish, J.R.; Xie, K.
April 1994
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2315
Academic Journal
Demonstrates the etching of single crystal 6 hydrogen-silicon carbide in an electron cyclotron resonance (ECR) plasma reactor. Advantages of ECR etching; Effects of microwave power and substrate bias on etch rate and surface morphology; Use of low substrate bias to improve etch profiles and selectivity.


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