TITLE

Smooth etching of single crystal 6H-SiC in an electron cyclotron resonance plasma reactor

AUTHOR(S)
Flemish, J.R.; Xie, K.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2315
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the etching of single crystal 6 hydrogen-silicon carbide in an electron cyclotron resonance (ECR) plasma reactor. Advantages of ECR etching; Effects of microwave power and substrate bias on etch rate and surface morphology; Use of low substrate bias to improve etch profiles and selectivity.
ACCESSION #
4272590

 

Related Articles

  • High temperature electron cyclotron resonance etching of GaN, InN, and AlN. Shul, R.J.; Kilcoyne, S.P. // Applied Physics Letters;4/3/1995, Vol. 66 Issue 14, p1761 

    Examines the electron cyclotron resonance (ECR) etching of gallium arsenide, indium nitride and aluminum nitride films. Calculation of etch rates for the nitride films; Derivation of atomic oxygen from ECR Wavemat source; Application of type III-V nitrides to ultraviolet light emitting diodes...

  • Room-temperature Si[sub 3]N[sub 4] and Ge[sub 3]N[sub 4] growths by Si and Ge surface.... Bolmont, D.; Bischoff, J.L.; Lutz, F.; Kubler, L. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2742 

    Examines the use of electron cyclotron resonance plasma source in silicon surface nitridation at room temperature. Use of x-ray photoelectron spectroscopy; Compositional deviations of grown nitride layers; Analysis of the interface subnitride configurations.

  • Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching.... Haverlag, M.; Vender, D. // Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2875 

    Examines silicon (Si) surface damage in electron cyclotron resonance (ECR) plasma etching using in situ ellipsometry. Employment of CF[sub 4] and SF[sub 6] plasmas; Discussion on Si surface damage with rf bias voltage for all ECR plasma operating conditions; Dependence of surface damage on ion...

  • The L3A facility at the Vinca Institute: Surface modification of materials, by heavy ion beams from an electron cyclotron resonance ion source. Dobrosavljevic, A.; Milosavljevic, M.; Bibic, N.; Efremov, A. // Review of Scientific Instruments;Feb2000, Vol. 71 Issue 2, p786 

    Describes the L3A experimental facility for surface modification of materials at the Vinca Institute of Nuclear Sciences in Belgrade, Belgium. Connection to the electron cyclotron resonance ion source; Description of target chamber; Experimental programs.

  • Plasma modification of polymethylmethacrylate and polyethyleneterephthalate surfaces. Gröning, P.; Collaud, M.; Dietler, G.; Schlapbach, L. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p887 

    Reports on the noble gas and reactive gas plasma treatments of polymethylmethacrylate and polyethyleneterephthalate surfaces performed in an electron-cyclotron-resonance plasma. Details of the experiment; Surface modification as a function of the plasma treatment.

  • Spatial distributions of electron temperature and density in electron cyclotron resonance... Cronrath, W.; Bowden, M.D. // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2105 

    Examines the spatial distributions of electron temperature and density in electron cyclotron resonance discharges. Locations of the electron cyclotron resonance zones; Simulation results from a hybrid code; Large difference of radial electron density profiles.

  • Monte Carlo simulations of argon ion transport in the downstream region of electron cyclotron... Zhong, X.X.; Wu, J.D.; Wu, C.Z.; Li, F.M. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5069 

    Provides information on the description of the ion dynamics in the downstream region of electron cyclotron resonance (ECR) argon plasma with the gas pressure ranging from 0.01 Pa to 0.1 Pa. Indepth look at the Monte Carlo method; Detailed information on the assumptions and governing equations;...

  • Measurement of lower-hybrid-driven current profile by Abel inversion of electron-cyclotron wave transmission spectra. Fidone, I.; Giruzzi, G.; Caron, X.; Meyer, R. L. // Physics of Fluids B: Plasma Physics;Oct91, Vol. 3 Issue 10, p2719 

    A method for measuring the radial profile of the lower-hybrid-driven current in a low-density tokamak plasma using electron-cyclotron wave attenuation is discussed. This diagnostic scheme is reminiscent of the transmission interferometry approach, commonly used in tokamaks to measure the plasma...

  • He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials. Mitchell, D. B.; Robinson, B. J.; Thompson, D. A.; Qian, Li; Benjamin, S. D.; Smith, P.W. E. // Applied Physics Letters;7/22/1996, Vol. 69 Issue 4, p509 

    InP and related quaternaries (InGaAsP) have been grown by conventional gas source molecular beam epitaxy while simultaneously exposing the growth surface to a He plasma stream generated by electron cyclotron resonance. For growth temperatures from 400 to 450 °C, the InP produced by this...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics