TITLE

On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin

AUTHOR(S)
Im, James S.; Kim, H.J.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the super lateral growth (SLG) phenomenon observed in excimer laser-induced crystallization of thin silicon (Si) films. Analysis of the single-crystal disk structure observed at the upper threshold of the SLG regime; Discussion of the SLG phenomenon; Rationale for the crystallization of Si thin films.
ACCESSION #
4272586

 

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