On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin

Im, James S.; Kim, H.J.
April 1994
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2303
Academic Journal
Describes the super lateral growth (SLG) phenomenon observed in excimer laser-induced crystallization of thin silicon (Si) films. Analysis of the single-crystal disk structure observed at the upper threshold of the SLG regime; Discussion of the SLG phenomenon; Rationale for the crystallization of Si thin films.


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