TITLE

Photoresponse characteristics of n-type tetrahedral amorphous carbon/p-type Si heterojunction

AUTHOR(S)
Veerasamy, V.S.; Amaratunga, G.A.J.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2297
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the photoresponse characteristics of n-type tetrahedral amorphous carbon (ta-C)/p-type silicon heterojunction diodes. Factors attributed to the photovoltage increase and shift in responsivity peaks; Projection of Si depletion width and ta-C doping level; Use of secondary ion mass spectroscopy to confirm the abrupt nature of the junctions.
ACCESSION #
4272584

 

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