Photoresponse characteristics of n-type tetrahedral amorphous carbon/p-type Si heterojunction

Veerasamy, V.S.; Amaratunga, G.A.J.
April 1994
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2297
Academic Journal
Demonstrates the photoresponse characteristics of n-type tetrahedral amorphous carbon (ta-C)/p-type silicon heterojunction diodes. Factors attributed to the photovoltage increase and shift in responsivity peaks; Projection of Si depletion width and ta-C doping level; Use of secondary ion mass spectroscopy to confirm the abrupt nature of the junctions.


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