TITLE

Low bias electron resonance plasma etching of GaN, AlN and InN

AUTHOR(S)
Pearton, S.J.; Abernathy, C.R.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2294
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the low bias electron cyclotron resonance plasma etching of gallium nitride, aluminum nitride, and indium nitride. Variation in the etching rates of chlorine/hydrogen molecule and methane/hydrogen molecule/argon; Description of the III-V nitride surfaces; Factors attributed to the production of etch rates.
ACCESSION #
4272583

 

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