Low bias electron resonance plasma etching of GaN, AlN and InN

Pearton, S.J.; Abernathy, C.R.
April 1994
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2294
Academic Journal
Demonstrates the low bias electron cyclotron resonance plasma etching of gallium nitride, aluminum nitride, and indium nitride. Variation in the etching rates of chlorine/hydrogen molecule and methane/hydrogen molecule/argon; Description of the III-V nitride surfaces; Factors attributed to the production of etch rates.


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