Deep photoluminescence in Si/Si[sub 1-x]Ge[sub x]/Si quantum wells created by ion implantation

Sturm, J.C.; St. Amour, A.
April 1994
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2291
Academic Journal
Demonstrates photoluminescence in silicon/Si[sub 1-x]Ge[sub x] quantum wells (QW) by ion implantation and annealing. Characteristics of chemical vapor deposition (CVD) grown QW; Comparison of the observe luminescence in molecular beam epitaxy (MBE) and CVD grown materials; Mechanisms responsible for the formation of the MBE band in MBE samples.


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