TITLE

Charge state of the natural EX defect in thermal SiO[sub 2]

AUTHOR(S)
Stesmans, A.; Scheerlinck, F.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2282
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the charge state of the EX defect in thermal silicon dioxide. Use of K-band electron spin resonance and capacitance-voltage measurements; Relationship between EX defect passivation and charge neutralization of the centers; Factors responsible for the EX defects.
ACCESSION #
4272579

 

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