TITLE

Conductance study of silicon nitride/InP capacitors with an In[sub 2]S[sub 3] interface control

AUTHOR(S)
Sundararaman, C.S.; Milhelich, P.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2279
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents conductance measurements of silicon nitride/indium phosphide (InP) capacitors with an In[sub 2]S[sub 3] interface control layer. Factors attributed to the production of single time conductance peaks; Presence of low interface trap densities in the InP band gap; Implication of the interface traps for metal-insulator-semiconductor structures.
ACCESSION #
4272578

 

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