TITLE

Oxide-semiconductor interface roughness and electrical properties of polycrystalline silicon

AUTHOR(S)
Takahashi, Hiroshi; Kojima, Yoshikazu
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2273
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates polycrystalline silicon thin film transistors (poly-Si TFT) with a smooth oxide-semiconductor interface. Electrical properties of poly-Si TFT; Analysis of the oxide-semiconductor interface topography using nanometer resolution atomic force microscopy; Relationship between interface roughness and electrical properties of poly-Si TFT.
ACCESSION #
4272576

 

Related Articles

  • The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon... Gruhle, A.; Kibbel, H.; Konig, U. // Applied Physics Letters;8/30/1999, Vol. 75 Issue 9, p1311 

    Describes a method to quantitatively determine the outdiffusion of base dopant out of the silicon germanium (SiGe) region into an emitter or collector in a SiGe heterojunction bipolar transistor (HBT). Reduction of boron diffusion by carbon doping as a function of carbon concentration and...

  • Improvement on the current-voltage characteristics of polycrystalline silicon contacted n+-p junctions with high-field stressing. Wu, S. L.; Lee, C. L.; Lei, T. F. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1031 

    Improvement on the current-voltage characteristics of polycrystalline silicon contacted n+-p junctions after they were applied a high-field scanned stressing is reported. For the stressed diodes, the leakage current decreased as much as two orders, the breakdown voltage shifted from -45 to -60...

  • InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs.... Ohkubo, Michio; Iketani, Akira; Ijichi, Tetsurou; Kikuta, Toshio // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2697 

    Examines the fabrication of indium gallium arsenide (InGaAs)/indium phosphide double-heterojunction bipolar transistors. Application of metalorganic vapor phase deposition; Insertion of step-graded InGaAs layers; Dependence of collector current on collector/emitter voltage.

  • Multiple-junction single-electron transistors for digital applications. Chen, R. H.; Likharev, K. K. // Applied Physics Letters;1/5/1998, Vol. 72 Issue 1 

    The concept of the capacitively coupled single-electron transistor (CSET) is generalized to a device based on a linear array of N tunnel junctions. The basic characteristics of such multiple-junction CSETs are calculated for several distributions of tunnel junction and coupling capacitances. The...

  • InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor. Chang, P. C.; Chang, P.C.; Baca, A. G.; Baca, A.G.; Li, N. Y.; Li, N.Y.; Xie, X. M.; Xie, X.M.; Hou, H. Q.; Hou, H.Q.; Armour, E. // Applied Physics Letters;4/17/2000, Vol. 76 Issue 16 

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In[sub 0.03]Ga[sub 0.97]As[sub 0.99]N[sub 0.01]/GaAs DHBT has a low V[sub ON] of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor...

  • Comparison of graded and abrupt junction In[sub 0.53]Ga[sub 0.47]As heterojunction bipolar.... Baquedano, J.A.; Levi, A.F.J.; Jalali, B. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p67 

    Compares graded and abrupt junction In[sub 0.53]Ga[sub 0.47]As heterojunction bipolar transistors (HBT). Results of numerically simulating charge transport in graded and abrupt junction n-p-n HBT lattice matched in indium phosphide; Reduction of the base resistance; Advantages of graded emitter...

  • JUNCTIONLESS TRANSISTOR.  // Technotrends Newsletter;Jul2010, Vol. 26 Issue 7, p2 

    The article reports that a team of researchers at the Tyndall National Institute are trying to develop junctionless transistors by using one type of doping.

  • Monolayer gamma-doped heterojunction bipolar transistor characteristics from 10 to 350 K. Goossen, K.W.; Cunningham, J.E. // Applied Physics Letters;8/5/1991, Vol. 59 Issue 6, p682 

    Demonstrates the effects of temperature on the current gain of delta-doped heterojunction bipolar transistor (HBT). Characteristics of GaAs compound HBT with base doping; Decrease of sheet resistance; Completion of thin base HBT.

  • Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors. G.-Jarrix, S.; Penarier, A.; Pascal, F.; Delseny, C.; Chay, C.; Blayac, S. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p4246 

    The 1/f noise of double InP/InGaAs heterojunction bipolar transistors is measured and analyzed. Standard mesa transistors, transistors with an air-bridge-connected base and hexagonal shaped transistors conceived for digital circuits are studied. These differences in the technology will have an...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics