Oxide-semiconductor interface roughness and electrical properties of polycrystalline silicon

Takahashi, Hiroshi; Kojima, Yoshikazu
April 1994
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2273
Academic Journal
Fabricates polycrystalline silicon thin film transistors (poly-Si TFT) with a smooth oxide-semiconductor interface. Electrical properties of poly-Si TFT; Analysis of the oxide-semiconductor interface topography using nanometer resolution atomic force microscopy; Relationship between interface roughness and electrical properties of poly-Si TFT.


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