TITLE

Writing electronic nanometer structures into porous Si films by scanning tunneling microscopy

AUTHOR(S)
Enachescu, M.; Hartmann, E.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2253
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the production of nanometer-scale structures in porous silicon (PS) films by scanning tunneling microscopy. Magnitude of the threshold voltage observed in the writing process; Dependence of the modified regions on the writing parameters; Proposal for the creation of time-stable defect states within the PS layer.
ACCESSION #
4272569

 

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