TITLE

AlGaAs/InGaAs/GaAs single electron transistor fabricated by Ga focused ion beam implantation

AUTHOR(S)
Fujisawa, Toshimasa; Hirayama, Yoshiro
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2250
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a single electron aluminum gallium arsenide/indium gallium arsenide/gallium arsenide modulation-doped heterostructure transistors by gallium focused ion beam implantation. Characteristics of the heterostructure system; Formation of a dot structure; Observation of Coulomb oscillations in three in-plane gates.
ACCESSION #
4272568

 

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