TITLE

GaAs/AlGaAs multiquantum well resonant photorefractive devices fabricated using epitaxial lift-off

AUTHOR(S)
Kyono, C.S.; Ikossi-Anastasiou, K.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates gallium arsenide/aluminum gallium arsenide multiquantum well resonant photorefractive devices. Operation of the device in a quantum-confined Stark effect geometry; Use of epitaxial lift-off to remove the active device from the substrate; Implication of proton implant damage for the improvement of fringe visibility.
ACCESSION #
4272566

 

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