TITLE

Ultrathin device quality oxide-nitride-oxide heterostructure formed by remote plasma enhanced

AUTHOR(S)
Ma, Y.; Yasuda, T.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2226
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the oxide-nitride-oxide (ONO) heterostructures formed by remote plasma enhanced chemical vapor deposition. Analysis of the heterostructure as a dielectric material in a field-effect transistor; Electrical properties of the ONO dielectrics; Approaches used in forming the ONO structures.
ACCESSION #
4272560

 

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