Photoconductively switched antennas for measuring target resonances

Rahman, Arifur; Kralj, David
April 1994
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2178
Academic Journal
Examines the use of coplanar-strip horn antennas to generate propagating electromagnetic energy. Fabrication of antennas on gallium arsenide grown by molecular beam epitaxy; Details on transient scattering from slit-coupled circular and coaxial cavities; Relation of cavity resonant frequencies to transverse magnetic modes.


Related Articles

  • GaNAsSb material for ultrafast microwave photoconductive switching application. K. H. Tan; S. F. Yoon; Tripon-Canseliet, C.; Loke, W. K.; Wickasono, S.; Faci, S.; Saadsaoud, N.; Lampin, J. F.; Decoster, D.; Chazelas, J. // Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p063509 

    We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption...

  • Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001). Sadia, Cyril P.; Maria Laganapan, Aleena; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p123514 

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were...

  • The role of optical rectification in the generation of terahertz radiation from GaBiAs. Radhanpura, K.; Hargreaves, S.; Lewis, R. A.; Henini, M. // Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251115 

    We report on a detailed study of the emission of terahertz-frequency electromagnetic radiation from layers of GaBiyAs1-y (0≤y<0.04) grown by molecular beam epitaxy on (311)B and (001) GaAs substrates. We measure two orthogonally polarized components of the terahertz radiation emitted under...

  • Highly temperature insensitive quantum cascade lasers. Bai, Y.; Bandyopadhyay, N.; Tsao, S.; Selcuk, E.; Slivken, S.; Razeghi, M. // Applied Physics Letters;12/20/2010, Vol. 97 Issue 25, p251104 

    An InP based quantum cascade laser (QCL) heterostructure emitting around 5 μm is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T0 and T1, for operations above room temperature. A T0 value of 383 K...

  • Double-Pulsed Growth of InN by RF-MBE. Kraus, Andreas; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas // Journal of Electronic Materials;May2013, Vol. 42 Issue 5, p849 

    The initial steps of three different methods for growth of InN were investigated. For this purpose, layers of approximately 15 nm thickness were grown by applying continuous, pulsed or double-pulsed source fluxes. The surface morphologies were investigated by atomic force microscopy and scanning...

  • HgTe-CdTe-InSb heterostructures by molecular beam epitaxy. Ballingall, J. M.; Leopold, D. J.; Peterman, D. J. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p262 

    HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 °C. X-ray diffraction measurements indicate that thin epitaxiat layers are of high crystalline...

  • Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy. Ballingall, J. M.; Takei, W. J.; Feldman, Bernard J. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p599 

    (111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x-ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.

  • Deep level defect study of molecular beam epitaxially grown silicon films. Xie, Y. H.; Wu, Y. Y.; Wang, K. L. // Applied Physics Letters;1/27/1986, Vol. 48 Issue 4, p287 

    We report the result of the study on the electrically active deep level defects in Si films grown by molecular beam epitaxy. A deep level defect at Ec-0.58 eV is consistently obtained for samples grown on substrates with purposely contaminated surfaces. The observed defects are all located...

  • Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy. Hsu, C.; Sivananthan, S.; Chu, X.; Faurie, J. P. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p908 

    Since the crystallographic polarity of the CdTe(111) buffer layer can change the growth conditions of HgCdTe, HgMnTe, and HgZnTe, it is important to know the polarity of the terminating of the CdTe(111)||GaAs(100) substrates. It is especially important since this composite substrate appears as...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics