BeTe/ZnSe graded band gap ohmic contacts to p-ZnSe

Mensz, P.M.
April 1994
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2148
Academic Journal
Examines the use of beryllium telluride/zinc selenide (BeTe/ZnSe) graded band-gap layers as ohmic contacts to ZnSe based semiconductors. Employment of epitaxial structures of type II-VI compound diode lasers; Details on energy bands and current-voltage characteristics; Effects of the surface barrier on the contact resistance.


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