TITLE

BeTe/ZnSe graded band gap ohmic contacts to p-ZnSe

AUTHOR(S)
Mensz, P.M.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of beryllium telluride/zinc selenide (BeTe/ZnSe) graded band-gap layers as ohmic contacts to ZnSe based semiconductors. Employment of epitaxial structures of type II-VI compound diode lasers; Details on energy bands and current-voltage characteristics; Effects of the surface barrier on the contact resistance.
ACCESSION #
4272537

 

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