TITLE

Design of ohmic contacts to p-ZnSe

AUTHOR(S)
Dandrea, R.G.; Duke, C.B.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2145
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents design strategies for improving ohmic contacts to p-zinc selenide. Use of semiconductor epilayer with valence band offset to reduce metal/p-zinc selenide Schottky barrier; Effects of arsenic on the microscopic dipole at metal/semiconductor interface; Alteration of Schottky barrier heights.
ACCESSION #
4272536

 

Related Articles

  • Graded band gap ohmic contact to p-ZnSe. Fan, Y.; Han, J. // Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3160 

    Describes a quasi-ohmic contact to p-zinc selenide (ZnSe). Evaluation of contacting scheme by current-voltage characterization; Effect of hole barrier on ohmic behavior; Usefulness of the contact scheme at actual device current densities.

  • BeTe/ZnSe graded band gap ohmic contacts to p-ZnSe. Mensz, P.M. // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2148 

    Examines the use of beryllium telluride/zinc selenide (BeTe/ZnSe) graded band-gap layers as ohmic contacts to ZnSe based semiconductors. Employment of epitaxial structures of type II-VI compound diode lasers; Details on energy bands and current-voltage characteristics; Effects of the surface...

  • Contact resistance measurements on p-type 6H-SiC. Crofton, J.; Barnes, P.A.; Williams, J.R.; Edmond, J.A. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p384 

    Examines the contact resistance measurements for aluminum-titanium ohmic contacts to 6H-SiC as a function of epitaxial doping. Use of circular transmission line method to measure specific contact resistance; Determination of the Schottky barrier image force lowering of the; Comparison between...

  • Ideal Ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height. Teraji, T.; Hara, S. // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p689 

    Presents a method for forming titanium Ohmic contacts on n-type 6 hydrogen-silicon carbide (SiC) epitaxial layer by reducing Schottky barrier heights. Use of SiC surfaces to obtain ideal contacts; Preparation of the materials by oxidation followed by hydrogen fluoride etching; Characteristics...

  • Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100). Vos, M.; Xu, F.; Weaver, J. H.; Cheng, H. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1530 

    Schottky barrier formation for Al/ZnSe (100) and Au/ZnSe (100) was studied using photoelectron spectroscopy. The initial Fermi level position for sputter-annealed ZnSe (100) surfaces was 2.05 eV above the valence-band maximum (VBM). The final Fermi level position, established after the...

  • Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy. Agafonov, E. N.; Aminov, U. A.; Georgobiani, A. N.; Lepnev, L. S. // Semiconductors;Jan2001, Vol. 35 Issue 1, p48 

    Schottky diodes based on the single-crystal n-ZnSe and fabricated by nitrogen-ion implantation with subsequent postimplantation treatment employing radical-beam epitaxy in atomic oxygen were studied using deep-level transient spectroscopy. On the assumption that the Schottky barrier is high and...

  • Schottky barrier UV photodetectors based on zinc selenide. Makhniı, V. P. // Technical Physics;Sep98, Vol. 43 Issue 9, p1119 

    The results of investigations of the properties of UV photodetectors based on zinc selenide are presented. The influence of the parameters of the diode structure, the temperature, and the voltage on the main characteristics and parameters of the photodetectors is considered. © 1998 American...

  • Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures. Lansari, Y.; Ren, J. // Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2554 

    Presents an improved ohmic contacts for p-type zinc selenide (ZnSe) and related p-on-n diode structures. Effectiveness of mercuric selenide (HgSe) as ohmic contact material for p-type semiconductors; Use of molecular beam epitaxy in depositing HgSe in p-type ZnSe; Utility of photolithography in...

  • Correlation between the Electrical Properties and the Interfacial Microstructures of TiAl-Based Ohmic Contacts to p-Type 4H-SiC. Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori // Journal of Electronic Materials;May2004, Vol. 33 Issue 5, p460 

    In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/A1 and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2 x 10-5 Ω-cm² and 7 x 10-5 Ω-cm² annealing at...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics