New technique for measuring two-dimensional oxidation-enhanced diffusion in silicon at low

van Dort, M.J.; Lifka, H.
April 1994
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2130
Academic Journal
Presents a high resolution technique for measuring two-dimensional oxidation-enhanced diffusion (OED) in silicon. Utilization of periodic grid of lines and spacing as oxidation mask; Relation of OED to point-defect recombination at silicon/silicon oxide interface; Uniformity of polysilicon gratings.


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