Photolithographic patterning of protective arsenic capping on molecular beam epitaxy grown

Husby, H.; Grepstad, J.K.
April 1994
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2124
Academic Journal
Examines the patterning of arsenic (As) capping layer deposited on Al[sub x]Ga[sub 1-x]As epilayer surface through standard photolithography and etching in hydrogen radical beam. Existence of surface oxide and carbon impurities on hydrogen radical etched surfaces; Presence of As cap residues at photomask edges after the etching process.


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