TITLE

Photolithographic patterning of protective arsenic capping on molecular beam epitaxy grown

AUTHOR(S)
Husby, H.; Grepstad, J.K.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the patterning of arsenic (As) capping layer deposited on Al[sub x]Ga[sub 1-x]As epilayer surface through standard photolithography and etching in hydrogen radical beam. Existence of surface oxide and carbon impurities on hydrogen radical etched surfaces; Presence of As cap residues at photomask edges after the etching process.
ACCESSION #
4272529

 

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