Growth mechanism of GaAs by metalorganic vapor phase epitaxy

Hsu, C.C.; Xu, J.B.
April 1994
Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2105
Academic Journal
Examines the concentric ring patterns on metalorganic vapor phase epitaxy grown gallium arsenide surface by atomic force microscopy. Relevance of surface diffusion length of adatoms on the growth mechanism of concentric ring pattern; Emergence of stacking faults from the growth surface; Details on spiral growth caused by screw dislocations.


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