Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with

Takakuwa, Yuji; Enta, Yoshiharu
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p2013
Academic Journal
Examines the photoelectron intensity oscillation on silicon surface during chemical vapor deposition with silicon hydride gas. Effect of substrate temperature and gas pressure on the oscillation period; Use of selective-growth method in determining oscillation period correspondence to silicon growth; Application of deposition to semiconductor devices.


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