TITLE

Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with

AUTHOR(S)
Takakuwa, Yuji; Enta, Yoshiharu
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p2013
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoelectron intensity oscillation on silicon surface during chemical vapor deposition with silicon hydride gas. Effect of substrate temperature and gas pressure on the oscillation period; Use of selective-growth method in determining oscillation period correspondence to silicon growth; Application of deposition to semiconductor devices.
ACCESSION #
4272493

 

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