Nanoscale patterning and oxidation of H-passivated Si(100)-2x1 surfaces with an ultrahigh vacuum

Lyding, J.W.; Shen, T.-C.
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p2010
Academic Journal
Demonstrates the achievement of the nanoscale patterning of the hydrogen terminated Si(100)-2X1 surface. Use of an ultrahigh vacuum scanning tunneling microscope in the study; Condition causing the occurrence of patterning; Demonstration of local chemistry by the selective oxidation of the patterned areas.


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