TITLE

Electron and hole mobilities in lightly doped silicon

AUTHOR(S)
Misiakos, Konstantinos; Tsamakis, Dimitris
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p2007
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the electron and hole mobilities in lightly doped silicon. Basis for the measurement method; Insensitivity of the method to uncertainties regarding the ionized dopant densities; Effect of temperature on carrier and hole mobility.
ACCESSION #
4272491

 

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