TITLE

Correlation between photoluminescence and surface species in porous silicon: Low-temperature

AUTHOR(S)
Tsybeskov, L.; Fauchet, P.M.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1983
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Performs photoluminescence (PL) and Fourier-transform infrared measurements on light emitting porous silicon. Analysis of two different samples with different surface morphologies and initial concentrations; Increase of PL intensity in hydrogen-rich samples; Correlation between PL peak wavelength and the ratio of Si-O bonds over Si-H bonds.
ACCESSION #
4272483

 

Related Articles

  • Photoluminescence study of crosslinked reactive mesogens for organic light emitting devices. Contoret, A. E. A.; Farrar, S. R.; Khan, S. M.; O’Neill, M.; Richards, G. J.; Aldred, M. P.; Kelly, S. M. // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1465 

    We study the spectroscopic properties of luminescent liquid crystals which show a glassy nematic phase at room temperature and then form polymer networks by polymerization using ultraviolet light. The reactive mesogens possess fluorene-based aromatic cores with either diene or acrylate...

  • Optical linewidths of InGaN light emitting diodes and epilayers. O'Donnell, K.P.; Breitkopf, T. // Applied Physics Letters;4/7/1997, Vol. 70 Issue 14, p1843 

    Presents a comparative study on the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures. Insensitivity of the optical linewidths to temperature; Contribution of three mechanisms to the...

  • Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure.... Mohs, Georg; Fluegel, Brian // Applied Physics Letters;9/11/1995, Vol. 67 Issue 11, p1515 

    Analyzes the occurrence of photoluminescence (PL) in InGaN/AlGaN/GaN blue light-emitting-diodes. Variation of intensity and wavelength excitation for PL analysis; Impact of stimulated emissions on recombination processes; Analysis of changes in decay of PL depending on carrier densities.

  • Tailoring of light emission properties of functionalized oligothiophenes. Caldas, Marilia J.; Pettenati, Emanuele; Goldoni, Guido; Molinari, Elisa // Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2505 

    We investigate theoretically the light emission properties of short oligothiophenes containing a thienyl-S,S-dioxide moiety, which have recently been shown to exhibit strong photoluminescence efficiency and tunability. We find that the dioxide substitution tends to increase the torsion angle...

  • Enhanced ultraviolet photoluminescence from SiO[sub 2]/Ge:SiO[sub 2]/SiO[sub 2] sandwiched structure. Shen, J. K.; Shen, J.K.; Wu, X. L.; Wu, X.L.; Yuan, R. K.; Yuan, R.K.; Tang, N.; Zou, J. P.; Zou, J.P.; Mei, Y. F.; Mei, Y.F.; Tan, C.; Bao, X. M.; Bao, X.M.; Siu, G. G.; Siu, G.G. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    SiO[sub 2]/Ge:SiO[sub 2]/SiO[sub 2] sandwiched structure was fabricated for exploring efficient light emission. After annealed in N[sub 2] (O[sub 2]<1%), this structure shows three photoluminescence (PL) bands at 293, 395, and 780 nm. The intensity of the 395 nm band is largely enhanced in...

  • Strained Ga[sub x]In[sub 1-x]P multiple quantum wire light-emitting diodes: A luminescence.... Pearah, P.J.; Stellini, E.M.; Chen, A.C.; Moy, A.M.; Hsieh, K.C.; Cheng, K.Y. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p729 

    Describes the photoluminescence and electroluminescence of strained Ga[sub x]In[sub 1-x]P quantum wire light emitting diodes. Display of anisotropic polarization; Growth of the structure by an in situ epitaxial method; Dependence of emission intensity on incident excitation polarization.

  • Multicolor oligothiophene-based light-emitting diodes. Gigli, G.; Ingana¨s, O.; Anni, M.; De Vittorio, M.; Cingolani, R.; Barbarella, G.; Favaretto, L. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1493 

    We demonstrate wide tunability, from green to near infrared, of the electroluminescence emission of substituted oligothiophene compounds. The compounds are characterized by high chemical stability, electron affinities up to 3.1 eV and photoluminescence efficiencies up to 70%. These...

  • Enhanced electroluminescence using polystyrene as a matrix. He, Gufeng; Li, Yongfang; Liu, Jie; Yang, Yang // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4247 

    Poly[2-methoxy-5-(2′thyl-hexyloxy)-l,4-phenylene vinylene] (MEH-PPV) blends with polystyrene (PS) were used as emitting layers in polymer light-emitting diodes. Studies of photoluminescence and electroluminescence (El) of the blends indicate that interchain interactions were tremendously...

  • Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode. Qing-Xuan Yu, D. M.; Bo Xu; Qi-Hong Wu, D. M.; Yuan Liao; Guan-Zhong Wang, D. M.; Rong-Chuan Fang, D. M.; Hsin-Ying Lee; Ching-Ting Lee // Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4713 

    We report on photoluminescence in a ZnO/GaN heterostructure, which showed a donor–acceptor pair emission band at 3.270 eV and the longitudinal optical phonon replicas at 12 K. In comparison with p-type GaN, the positions of the peaks are redshifted. This may be associated with the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics