Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor

Hsu, K.T.; Chen, Y.H.
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1974
Academic Journal
Measures the photoreflectance spectrum from a lattice-matched InAlAs/InGaAs heterostructure bipolar transistor grown by molecular beam epitaxy. Identification of the energy features of photoreflectance spectra; Evaluation of the built-in direct current electric fields associated doping profiles; Purpose of adding the undoped InGaAs spacer.


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