Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron

Dongjin Byun; Seong-don Hwang
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1968
Academic Journal
Fabricates a boron-carbide/silicon (Si)(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. Comparison with similar diodes fabricated by plasma enhanced chemical vapor deposition; Occurrence of the synchrotron radiation induced chemical vapor deposition; Possibility of real-time projection lithography of boron-carbide devices.


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