Estimating oxide-trap, interface-trap, and border-trap charge densities in

Fleetwood, D.M.; Shaneyfelt, M.R.
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1965
Academic Journal
Estimates oxide-trap, interface-trap, and border-trap charge densities in metal-oxide-semiconductor (MOS) transistors. Description of a method combining conventional threshold-voltage and charge-pumping measurements on MOS transistors; Function of near-interfacial oxide traps in depicting MOS device radiation response; Achievement of border-trap charge densities.


Related Articles

  • Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structures. Griscom, David L. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2524 

    Presents a study that investigated the radiation-induced point defects distributed in thermally grown silicon oxide-on-silicon metal-oxide-semiconductors. Information on the radiation damage processes in amorphous silicon oxide; Details on a model for post-irradiation interface-state buildup;...

  • Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems. Fujieda, Shinji; Miura, Yoshinao; Saitoh, Motofumi; Hasegawa, Eiji; Koyama, Shin; Ando, Koichi // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3677 

    Interface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasmanitrided SiON/Si(100) system were characterized by using D[sub 2] annealing, conductance-frequency measurements, and electron-spin resonance measurements. D[sub 2] annealing was shown to lower...

  • Burst/Popcorn Noise in Linear BiCMOS and BCD Technologies. Srinivasan, Purushothaman // Power Electronics Technology Exclusive Insight;1/29/2013, p5 

    The article discusses burst or popcorn noise in Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) and Bipolar Complementary Metal Oxide Semiconductor (CMOS) and Diffusion Metal Oxide Semiconductor (DMOS) (BCD) technologies. It describes burst noise characteristics in bipolar junction...

  • Interface state density measurements with a modified C-V technique. Gildenblat, G.; Pimbley, J. M.; Cote, M. F. // Applied Physics Letters;1984, Vol. 45 Issue 5, p558 

    Interface states in the metal-oxide-semiconductor (MOS) system have a great influence on the electrical properties of MOS capacitors and field-effect transistors. Several methods for measuring the density of these interface states within the forbidden band gap of silicon employ differential...

  • Germanium ... The Semiconductor of Tomorrow? Peaker, A. R.; Satta, A.; Markevich, V. P.; Simoen, E.; Hamilton, B. // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p3 

    Germanium is being investigated as an alternative channel material for mainstream CMOS. Although aspects of processing technology have similarities to silicon, ion implantation, and particularly the activation of dopants and removal of implant damage appear to be fundamentally different. In this...

  • Interface defects in SiC power MOSFETs - an electrically detected magnetic resonance study based on spin dependent recombination. Gruber, Gernot; Hadley, Peter; Koch, Markus; Peters, Dethard; Aichinger, Thomas // AIP Conference Proceedings;2014, Vol. 1583, p165 

    This study presents electrically detected magnetic resonance (EDMR) measurements on a silicon carbide (SiC) MOSFET having the structure of a double-diffused silicon MOSFET (DMOS). The resonance pattern of a SiC DMOS was measured by monitoring the change of the recombination current between the...

  • Persistent photoconductivity in Hf-In-Zn-O thin film transistors. Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U-In; Lee, Je-Hun // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p143510 

    Passivated Hf-In-Zn-O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin of the PPC following observations of its temperature- and...

  • Pd-Vacancy Complex in Ge: TDPAC and Ab initio Study. Abiona, Adurafimihan A.; Kemp, Williams; Timmers, Heiko // AIP Conference Proceedings;2014, Vol. 1583, p105 

    Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how...

  • Monocliniclike local atomic structure in amorphous ZrO2 thin film. Cho, Deok-Yong; Jung, Hyung-Suk; Kim, Jeong Hwan; Hwang, Cheol Seong // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141905 

    The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics