Spiral growth of GaAs by metalorganic vapor phase epitaxy

Hsu, C.C.; Lu, Y.C.
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1959
Academic Journal
Observes the growth spirals on metalorganic vapor phase epitaxy grown gallium arsenide by atomic force microscopy. Use of Burton-Cabrera-Frank theory as growth basis; Origination of the spirals from screw dislocations; Detection of two-dimensional nucleation islands on the vicinal steps.


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