Photoluminescence determination of the Fermi energy in heavily doped strained

Libezny, M.; Jain, S.C.
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1953
Academic Journal
Measures band gap narrowing and Fermi energy from photoluminescence (PL) spectra in strained Si[sub 1-x]Ge[sub x] layers. Use of chemical vapor deposition; Observation of the no-phonon and TO-phonon replicas corresponding to free-electron band-to-band transitions; Role of PL curves in determining band-gap narrowing and Fermi level energy.


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