High-resolution transmission electron microscopic study of the gamma-FeSi[sub 2]/Si(111) interface

Muller, E.; Grindatto, D.P.
April 1994
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1938
Academic Journal
Determines the atomic structure of the B-type gamma-FeSi[sub 2]//Si(111) interfaces by high-resolution transmission electron microscopy. Combination of dynamical calculations of the image contrast in the study; Agreement of one interface model with observations; Attachment of Fe atoms to the substrate silicon atoms.


Related Articles

  • (001) faceting and Bi[sub 2]Sr[sub 2]CuO[sub 6+x](T[sub c]=7-22K) phase formation at the.... Feng, Y.; Larbalestier, D.C. // Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1234 

    Investigates the Ag/Bi-Sr-Ca-Cu-O (BSCCO) interface in Ag-clad bi-2212 tapes by high-resolution transmission electron microscopy. Absence of nonsuperconducting second phases from the interface; Observation of a one-half-unit-cell-thick layer of the Bi-2201 phase; Presence of texturing of the...

  • New interface structure for A-type CoSi[sub 2]/Si(111). Chisholm, M.F.; Pennycook, S.J.; Jebasinski, R.; Mantl, S. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2409 

    Presents a model of CoSi[sub 2]/Si(111) interface structure produced by Z-contrast scanning transmission electron microscopy. Implantation of cobalt ions in silicon substrates; Presence of coordinated cobalt atoms at the interface structure; Atomic structure of the buried CoSi[sub 2] layer.

  • Atomic structures at a Si–nitride/Si(001) interface. Ikarashi, Nobuyuki; Watanabe, Koji; Miyamoto, Yoshiyuki // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    We used high-resolution transmission electron microscopy to show that the atomic structures at a Si[sub 3]N[sub 4]/Si interface are clearly different from those at a SiO[sub 2]/Si interface. Using first-principles calculations, we also found that, in one of the observed N-induced interfacial...

  • Detailed atomic scale structure of AlInAs/GaInAs quantum wells. Bimberg, D.; Oertel, D.; Hull, R.; Reid, G. A.; Carey, K. W. // Journal of Applied Physics;4/1/1989, Vol. 65 Issue 7, p2688 

    Presents a study that determined the atomic structure of GaInAs quantum wells between AlInAs barriers using transmission electron microscopy and luminescence line-shape analysis. Analysis of the lattice structure image of the quantum well; Examination of the luminescence spectra; Influence of...

  • Atomic-scale imaging of individual dopant atoms in a buried interface. Shibata, N.; Findlay, S. D.; Azuma, S.; Mizoguchi, T.; Yamamoto, T.; Ikuhara, Y. // Nature Materials;Aug2009, Vol. 8 Issue 8, p654 

    Determining the atomic structure of internal interfaces in materials and devices is critical to understanding their functional properties. Interfacial doping is one promising technique for controlling interfacial properties at the atomic scale, but it is still a major challenge to directly...

  • Electron microscope reveals chemical secrets of atomic structures. von Harrach, Sebastian // New Scientist;7/20/91, Vol. 131 Issue 1778, p18 

    Reports on British scientist Stephen Pennycook's use of a scanning transmission electron microscope (STEM) equipped with a field-emission gun for the chemical identification of crystalline materials on an atomic scale. Details of how the field-emission gun operates; Description of experiments...

  • Origin of dual epitaxy in the growth of CdTe on (211) GaAs. Nakamura, Y.; Otsuka, N. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1372 

    Analyzes the atomic structure of the (133)cadmium telluride/(211)gallium arsenide interface. Use of high resolution transmission electron microscopy; Origin of the dual epitaxy; Presence of a mechanism accommodating the lattice mismatch at the interface.

  • The Atomic Structure of Disordered Ion Tracks in Magnesium Aluminate Spinel. Yasuda, Kazuhiro; Yamamoto, Tomokazu; Matsumura, Syo // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Apr2007, Vol. 59 Issue 4, p27 

    Atomic resolution transmission-electron microscopy (TEM) observations and analysis have been undertaken on magnesium aluminate spinel to understand the structure of ion tracks induced by swift heavy ions. A combination of TEM techniques, which includes high- resolution and bright-field (BF)...

  • Atomic-scale structure and electronic property of the LaAlO3/TiO2 interface. Zhongchang Wang; Wen Zeng; Lin Gu; Saito, Mitsuhiro; Tsukimoto, Susumu; Ikuhara, Yuichi // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p113701 

    Combining advanced transmission electron microscopy with high-precision first-principles calculation, atomic-scale structures of the LaAlO3/TiO2 interface are investigated and bridged to their electronic property at the atomic level. Experimentally, the deposited TiO2 thin film is demonstrated...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics