TITLE

Broadband femtosecond pump-probe setup operating at 1300 and 1550 nm

AUTHOR(S)
Mark, J.; Tessler, N.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1899
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes a broadband, tunable femtosecond pump-probe measurement setup operating in the 1300 and 1550 nanometer wavelength range. Measurements of carrier dynamics in the barrier states of multiple quantum well optical amplifier; Excitation of the amplifier in the gain region; Result of details which are not observable in single-wavelength pump-probe measurements.
ACCESSION #
4272454

 

Related Articles

  • Spectral shift and distortion due to self-phase modulation of picosecond pulses in 1.5 μm optical amplifiers. Olsson, N. A.; Agrawal, Govind P. // Applied Physics Letters;7/3/1989, Vol. 55 Issue 1, p13 

    Picosecond pulses are observed to exhibit large frequency shifts (∼50 GHz) and spectral distortion on propagation through semiconductor laser optical amplifiers. The spectral changes are shown to result from self-phase modulation occurring due to the carrier-induced index changes that...

  • Amplification of high repetition rate picosecond pulses using an InGaAsP traveling-wave optical amplifier. Eisenstein, G.; Hansen, P. B.; Wiesenfeld, J. M.; Tucker, R. S.; Raybon, G. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1539 

    We report amplification of picosecond pulses at high repetition rates in a 1.3 μm traveling-wave optical amplifier. At 4 GHz repetition rate, the small-signal chip gain is 20 dB, the amplified peak output power at the facet is 400 mW (corresponding to a pulse energy of 3 pJ/pulse), and there...

  • Distortionless picosecond pulse amplification and gain compression in a traveling-wave InGaAsP optical amplifier. Wiesenfeld, J. M.; Eisenstein, G.; Tucker, R. S.; Raybon, G.; Hansen, P. B. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1239 

    Pulses of 3–9 ps duration at wavelengths between 1.22 and 1.27 μm are amplified by a 1.3 μm InGaAsP traveling-wave optical amplifier. The gain decreases linearly with the output energy by up to 2.6 dB at the highest available energies. The output energy and peak power of the...

  • Gain and gain saturation spectra in 1.5 μm multiple quantum well optical amplifiers. Eisenstein, G.; Koren, U.; Raybon, G.; Wiesenfeld, J. M.; Wegener, M. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p333 

    We describe the wavelength dependence of small-signal picosecond pulse energy gain and cw power gain, as well as saturation energy and saturation output power spectra, in 1.5 μm multiple quantum well optical amplifiers of different lengths and under various drive conditions. The present...

  • Femtosecond switching with semiconductor-optical-amplifier-based Symmetric Mach-Zehnder-type all-optical switch. Nakamura, Shigeru; Ueno, Yoshiyasu; Tajima, Kazuhito // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3929 

    We investigate the effect of intraband carrier dynamics on a nonlinear phase shift induced in a semiconductor optical amplifier (SOA) in terms of its applicability to the Symmetric Mach-Zehnder (SMZ) all-optical switch. Nonlinear phase shifts in an SOA and a passive semiconductor waveguide are...

  • Intraband effects on ultrafast pulse propagation in semiconductor optical amplifier. Hussain, K.; Varshney, S.; Datta, P. // Pramana: Journal of Physics;Nov2010, Vol. 75 Issue 5, p1011 

    High bit-rate (>10 Gb/s) signals are composed of very short pulses and propagation of such pulses through a semiconductor optical amplifier (SOA) requires consideration of intraband phenomena. Due to the intraband effects, the propagating pulse sees a fast recovering nonlinear gain which...

  • Ytterbium Innoslab amplifiers - The high average power approach of ultrafast lasers. Rußbüldt, P.; Weitenberg, J.; Sartorius, Th.; Rotarius, G.; Hoffmann, H. D.; Poprawe, R. // AIP Conference Proceedings;7/9/2012, Vol. 1462 Issue 1, p120 

    Ytterbium Innoslab amplifiers are designed for a good thermal management and low nonlinearity and enable ultrafast laser systems with high average power and almost diffraction limited beam quality. In the present contribution the extension of the Innoslab platform beyond the already realized 1...

  • Description of Multichannel Amplification in Semiconductor Optical Amplifier. Kadhim, Sadiq Jaafar; Hassan, Ali Hadi; Yasser, Hassan Abid // International Journal of Radio Frequency Identification & Wirele;2012, Vol. 2 Issue 2, p1 

    In this paper, a generalized equation of pulse propagation in semiconductor optical amplifier (SOA) under the effects of four wave mixing (FWM) has been derived. This equation is applicable for any wavelength division multiplexing system in presence of both interband and intraband effects. The...

  • 100 W peak-power 1 GHz repetition picoseconds optical pulse generation using blue-violet GaInN diode laser mode-locked oscillator and optical amplifier. Koda, Rintaro; Oki, Tomoyuki; Miyajima, Takao; Watanabe, Hideki; Kuramoto, Masaru; Ikeda, Masao; Yokoyama, Hiroyuki // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p021101 

    We have generated single-transverse-mode optical pulses with 100 W peak power and 3 ps duration at 1 GHz repetition from a blue-violet GaInN mode-locked laser diode (MLLD) and a semiconductor optical amplifier (SOA) without the use of any pulse compression. The generation of clean optical pulses...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics