Anomalous diffusion of isoelectric antimony implant induced defects in GaAs-AlGaAs multiquantum

Rao, E.V.K.; Krauz, Ph.
March 1994
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1552
Academic Journal
Presents the evidence on the deep diffusion of isoelectronic antimony implant induced defects in thick gallium arsenide-aluminum gallium arsenide multiquantum well structures. Anomalous diffusion of defects during implantation; Sensitivity of the photoluminescence to defects; Exhibition of photoluminescence intensity linescans.


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