Study of mechanism to control electrical properties of AlAs grown using amine-alane with

Miyakoshi, Kaoru; Suemune, Ikuo
March 1994
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1549
Academic Journal
Examines the mechanism to control electrical properties of aluminum arsenide films grown by metalorganic molecular beam epitaxy. Critical dependence of electrical properties on the supply ratio of the precursor; Factor to control the electrical properties; Decomposition of the trimethylamine on aluminum surface.


Related Articles

  • Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular-beam epitaxy. Missous, M.; Rhoderick, E. H.; Singer, K. E. // Journal of Applied Physics;5/1/1986, Vol. 59 Issue 9, p3189 

    Details a study which examined the annealing behavior of epitaxial films of aluminum deposited on gallium arsenide by molecular-beam epitaxy. Molecular beam epitaxy; Thermal behavior of epitaxial film; Transmission electron microscopy analysis of the aluminum films.

  • Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1-xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy. Hoshi, T.; Hazu, K.; Ohshita, K.; Kagaya, M.; Onuma, T.; Fujito, K.; Namita, H.; Chichibu, S. F. // Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG 

    In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane AlxGa1-xN films grown on a freestanding GaN substrate by NH3-source molecular beam epitaxy. The homoepitaxial GaN film exhibited A- and B-excitonic emissions at 8 K, which...

  • Morphology-dependent electric transport in textured ultrathin Al films grown on Si. Aswal, D. K.; Joshi, Niraj; Debnath, A. K.; Muthe, K. P.; Gupta, S. K.; Yakhmi, J. V.; Vuillaume, Dominique // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p026103 

    The thickness and temperature dependence of the electrical resistivity of the (111) textured ultrathin aluminum metal films grown on (111) Si substrates using molecular-beam epitaxy have been investigated. For films with thickness <50 nm, the room-temperature value of resistivity—contrary...

  • HgTe-CdTe-InSb heterostructures by molecular beam epitaxy. Ballingall, J. M.; Leopold, D. J.; Peterman, D. J. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p262 

    HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 °C. X-ray diffraction measurements indicate that thin epitaxiat layers are of high crystalline...

  • Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy. Ballingall, J. M.; Takei, W. J.; Feldman, Bernard J. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p599 

    (111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x-ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.

  • Deep level defect study of molecular beam epitaxially grown silicon films. Xie, Y. H.; Wu, Y. Y.; Wang, K. L. // Applied Physics Letters;1/27/1986, Vol. 48 Issue 4, p287 

    We report the result of the study on the electrically active deep level defects in Si films grown by molecular beam epitaxy. A deep level defect at Ec-0.58 eV is consistently obtained for samples grown on substrates with purposely contaminated surfaces. The observed defects are all located...

  • Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy. Hsu, C.; Sivananthan, S.; Chu, X.; Faurie, J. P. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p908 

    Since the crystallographic polarity of the CdTe(111) buffer layer can change the growth conditions of HgCdTe, HgMnTe, and HgZnTe, it is important to know the polarity of the terminating of the CdTe(111)||GaAs(100) substrates. It is especially important since this composite substrate appears as...

  • Low-temperature growth of 3C-SiC by the gas source molecular beam epitaxial method. Motoyama, Shin-ichi; Kaneda, Shigeo // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p242 

    Single crystalline 3C-SiC films were grown on a Si substrate by molecular beam epitaxy (MBE) using SiHCl3 and C2H4 gases. The optimal growth conditions were achieved at a growth temperature (Tsub ) of 1000 °C and a gas pressure ratio (PSiHCl3 /PC2H4 ) of 1/3 at PSiHCl3 =1×10-5 Torr. Prior...

  • Properties of Si layers grown by molecular beam epitaxy at very low temperatures. Jorke, H.; Kibbel, H.; Schäffler, F.; Casel, A.; Herzog, H.-J.; Kasper, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p819 

    (100) silicon molecular beam epitaxy films with etch pit densities below 103 cm-2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics