TITLE

Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by

AUTHOR(S)
Cheng, T.M.; Chin, Albert
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1546
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of arsenide precipitates in low temperature strained indium gallium arsenide quantum well. Observation of the arsenic precipitates; Accumulation of arsenide precipitates; Formation of quasi-two-dimensional arsenide lines; Difference of interfacial energy between precipitate and matrix.
ACCESSION #
4272436

 

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