Thermal quenching properties of Er-doped GaP

Wang, X.Z.; Wessels, B.W.
March 1994
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1537
Academic Journal
Examines the photoluminescent properties of the erbium(Er)-doped epitaxial layers of gallium phosphide (GaP) prepared by metalorganic vapor phase epitaxy. Characteristics of Er[sup3+]intra-4f-shell emission; Measurement of the integrated intensity of the emission; Potential of Er-doped GaP as material for optical devices.


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