TITLE

Monolayer thickness control of In[sub x]Ga[sub 1-x]As/GaAs quantum wells grown by metalorganic

AUTHOR(S)
Courboules, B.; Massies, J.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1523
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the capability of metalorganic molecular beam epitaxy to control thickness by growing high strained gallium arsenide quantum well structures. Determination of the emission lines from quantum wells; Growth of heterostructures with monolayer precision; Calculation of energy of the electron-heavy hole fundamental excitonic transition.
ACCESSION #
4272428

 

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