TITLE

Growth of cubic boron oxide nitride on Si(100) by neutralized nitrogen ion bombardment

AUTHOR(S)
Ming Lu; Bousetta, A.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1514
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the formation of boron nitride films through simultaneous use of nitrogen ion beam bombardment and boron deposition. Key parameter in producing the right amount of nitrogen at the substrate surface; Formation of the cubic phase of boron nitride films; Enhancement of the flux density.
ACCESSION #
4272425

 

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