TITLE

Optimum strain for the suppression of Auger recombination effects in compressively strained

AUTHOR(S)
Lui, Wayne W.; Yamanaka, Takayuki
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1475
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the suppression of Auger recombination effects in compressively strained quantum well structures. Existence of negative-curvature zone in the first valence subband; Observation of strong correlations between the negative-curvature zone and its adverse effects on auger recombinations; Effectiveness of compressive strain.
ACCESSION #
4272411

 

Related Articles

  • Auger lifetime in InAs, InAsSb, and InAsSb-In AlAsSb quantum wells. Lindle, J.R.; Meyer, J.R. // Applied Physics Letters;11/20/1995, Vol. 67 Issue 21, p3153 

    Investigates the Auger lifetimes for InAs, InAsSb, IAsSb-InAlAsSb quantum wells. Correlation of the Auger rate at 77 Kelvin with the proximity to resonance between the energy gap and the split-off gap; Reduction of the Auger coefficient in the alloy with decreasing temperature; Rise of the...

  • Unifying explanation for recent temperature sensitivity measurements of Auger recombination.... Lui, Wayne W.; Yamanaka, Takayuki // Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1616 

    Explains temperature sensitivity measurements of Auger recombination effects in compressively strained quantum-well structures. Attainment of realistic valence subband structures; Assumption of the conduction-hole-hole-splitoff process as the dominant recombination process; Definition of the...

  • Forbidden Auger process in strained InGaSb/AlGaSb quantum wells. Jiang, Y.; Teich, M. C.; Wang, W. I. // Applied Physics Letters;12/31/1990, Vol. 57 Issue 27, p2922 

    Carrier loss due to Auger recombination has been known to be the major factor limiting the performance of long-wavelength semiconductor lasers. We show for the first time that the dominant Auger process in InGaSb/AlGaSb and InGaAs/InP strained quantum well structures can be suppressed because of...

  • Auger recombination in strained quantum wells. Andreev, A. D.; Zegrya, G. G. // Semiconductors;Mar1997, Vol. 31 Issue 3, p297 

    A nonthreshold mechanism for Auger recombination of nonequilibrium carriers in quantum wells with strained layers is investigated theoretically. It is shown that the dependence of the Auger recombination rate on the magnitude of the strain and the height of the heterobarriers for electrons and...

  • Explanations for the temperature insensitivity of the Auger recombination rates in 1.55 microm.... Seki, Shunji; Lui, Wayne W. // Applied Physics Letters;6/5/1995, Vol. 66 Issue 23, p3093 

    Examines the temperature sensitivity of the Auger recombination rates in 1.55 micrometer indium phosphide-based quantum well lasers. Use of the band structures of the Poisson equation numerical solutions; Comparison of theoretical analysis results to clarify basic physical mechanism;...

  • Photon Avalanche in a Doped Quantum Well. Perlin, E. Yu. // Optics & Spectroscopy;Nov2001, Vol. 91 Issue 5, p729 

    The possibility of a photon avalanche in a doped quantum well irradiated by IR light is predicted. The proposed model includes the three lowest size-quantization subbands. The exciting IR light frequency is assumed to be in resonance with the transition between the second and third subbands....

  • Population Inversion and IR Amplification Induced by Intersubband Electron Transitions and Resonant Auger Processes in Quantum Wells. Vorob�ev, L. E. // JETP Letters;6/25/2000, Vol. 71 Issue 12, p511 

    A mechanism for electron population inversion and mid-IR amplification is proposed for the case of the current or optical injection of electron�hole pairs into the undoped region of a heterojunction with quantum wells. The presence of an upper long-lived size-quantization level and resonant...

  • Temperature-dependent measurement of Auger recombination in self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dots. Ghosh, S.; Bhattacharya, P.; Stoner, E.; Singh, J.; Jiang, H.; Nuttinck, S.; Laskar, J. // Applied Physics Letters;8/6/2001, Vol. 79 Issue 6 

    We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dot lasers. The...

  • Low-threshold interband cascade lasers with power efficiency exceeding 9%. Bruno, J. D.; Bruno, J.D.; Bradshaw, J. L.; Bradshaw, J.L.; Yang, Rui Q.; Pham, J. T.; Pham, J.T.; Wortman, D. E.; Wortman, D.E. // Applied Physics Letters;5/29/2000, Vol. 76 Issue 22 

    Midinfrared (3.6-3.8 μm) interband cascade lasers based on InAs/GaInSb type-II quantum wells have been demonstrated in the continuous-wave (cw) mode with low-threshold current densities (e.g., ∼56 A/cm2 at 80 K) and power efficiencies exceeding 9%. At a relatively low current of 0.4 A,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics