TITLE

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

AUTHOR(S)
Yeh, Hsi-Jen J.; Smith, John S.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1466
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the bonding of strained quantum well indium gallium arsenide vertical-cavity surface-emitting lasers on silicon and copper substrates. Removal of gallium arsenide substrates from the surface; Details of the process of achieving the lasing; Comparison between the performance characteristics of the silicon and copper bonded devices.
ACCESSION #
4272408

 

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