Low threshold, wafer fused long wavelength vertical cavity lasers

Dudley, J.J.; Babic, D.I.
March 1994
Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1463
Academic Journal
Demonstrates the fabrication of electrically injected InGaAsP (1.3 micro meter) vertical cavity lasers (VCL) on gallium arsenide (GaAs) substrates. Operation of threshold current densities; Integration of GaAs/aluminum arsenide mirrors with double heterostructures; Presentation of the schematic of the wafer fused VCL structures.


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