Growth kinetics and properties of heteroepitaxial ZnTe films grown by metalorganic molecular

Rajavel, D.; Zinck, J.J.
September 1992
Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1534
Academic Journal
Examines the growth of zinc telluride films on (001) gallium arsenide by metalorganic molecular beam epitaxy. Measurement of the reflection high energy electron diffraction intensity oscillations; Indication of film carbon contamination by secondary ion mass spectroscopic analysis; Features dominating the layer photoluminescence spectra.


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