Tungsten metallization onto InP prepared by rapid thermal low-pressure chemical vapor deposition

Katz, A.; Feingold, A.
September 1992
Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1522
Academic Journal
Examines the tungsten film deposition onto indium phosphide in a rapid thermal low-pressure chemical vapor deposition reactor using tungsten hexafluoride gas reduced by hydrogen. Dependence of film stress variation on the deposition pressure; Measurement of deposited film thickness; Correlation between film thickness and resistivity.


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