TITLE

Tungsten metallization onto InP prepared by rapid thermal low-pressure chemical vapor deposition

AUTHOR(S)
Katz, A.; Feingold, A.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1522
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the tungsten film deposition onto indium phosphide in a rapid thermal low-pressure chemical vapor deposition reactor using tungsten hexafluoride gas reduced by hydrogen. Dependence of film stress variation on the deposition pressure; Measurement of deposited film thickness; Correlation between film thickness and resistivity.
ACCESSION #
4272379

 

Related Articles

  • Organometallic chemical vapor deposition of tungsten metal, and suppression of carbon.... Niemer, Burkhard; Zinn, Alfred A. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1793 

    Examines the production of tungsten films through decomposition of bis-cyclopentadienyltungstendihydride. Use of organometallic chemical vapor deposition of to reduce carbon and oxygen content of the films; Presence of x-ray diffraction patterns of the metal; Details on platinum concentration...

  • Structure and optical properties of tungsten thin films deposited by pyrolysis of W(CO)6 at various temperatures. Davazoglou, D.; Pallis, G.; Psycharis, V.; Gioti, M.; Logothetidis, S. // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p6070 

    Presents a study which reported structural and optical properties of tungsten films deposited by chemical vapor deposition at atmospheric pressure and at temperatures by pyrolysis of W(CO)[sub6]. Applications of the tungsten thin films; Observation of the x-ray diffraction patterns for the...

  • Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin. Pinzone, C. J.; Gerrard, N. D.; Dupuis, R. D.; Ha, N. T.; Luftman, H. S. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p6823 

    Describes results of a study of the use tetraethyltin as a dopant source in the metalorganic chemical vapor deposition growth of indium phosphide and InGaAs and the realization of heavily doped n-type epitaxial layers. Crystal growth and characterization; Results and discussion; Conclusions.

  • Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine. Watkins, S. P.; Nissen, M. K.; Haacke, G.; Handler, E. M. // Journal of Applied Physics;10/1/1992, Vol. 72 Issue 7, p2797 

    Examines the residual donor and acceptor species in a series of high purity n-type indium phosphide epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Experiment; Results.

  • Mechanism for chemical-vapor deposition of tungsten on silicon from tungsten hexafluoride. Yarmoff, Jory A.; McFeely, F. Read // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5213 

    Presents a study which examined the mechanism for the growth of tungsten films on silicon substrates with the use of low-pressure chemical-vapor deposition and with soft-x-ray photemission by growing films in situ. Experiment on the growth of tungten films on silicon substrates; Details on the...

  • Tunability of the superconductivity of tungsten films grown by focused-ion-beam direct writing. Li, Wuxia; Fenton, J. C.; Wang, Yiqian; McComb, D. W.; Warburton, P. A. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093913 

    We have grown tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapor deposition. The films lie close to the metal-insulator transition with an electrical conductivity which changes by less than 5% between room temperature and 7 K. The superconducting transition temperature Tc...

  • Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor deposition. Bose, S. S.; Szafranek, I.; Kim, M. H.; Stillman, G. E. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p752 

    Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high-purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in...

  • Organometallic chemical vapor deposition and characterization of indium phosphide nanocrystals.... Hendershot, D. Greg; Gaskill, D. Kurt // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3324 

    Examines the organometallic chemical vapor deposition of indium phosphide nanocrystals in Vycor porous glass by thermal reaction of trimethylindium with phosphine. Evaluation on the nonlinear optical properties of nanocrystalline composites; Use of Z-scan measurements; Details on the absorption...

  • InP on Si(111): Accommodation of lattice mismatch and structural properties. Krost, A.; Heinrichsdorff, F.; Bimberg, D.; Cerva, H. // Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p769 

    Examines the growth of indium phosphide (InP) on vicinal silicon (Si) by chemical vapor deposition. Use of heterostructures for electronic devices; Comparison of defect sensitivity between InP and GaAs; Use of Si as a substrate for InP-based structures.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics