Nanoscale CoSi[sub 2] contact layer growth from deposited Co/Ti multilayers on Si substrates

Feng Hong; Rozgonyi, George A.
September 1992
Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1519
Academic Journal
Examines the formation of continuous, planar and thermally stable CoSi[sub 2] layers by cobalt/silicon interaction. Incorporation of oxygen into titanium layers during deposition; Identification of film resistivity by measuring sheet resistance and film thickness; Improvement in layer morphology by decreasing diffusion rates.


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