Characterization of epitaxial layers by the depth dependence of boron diffusivity

van Oostrum, K.J.; Zalm, P.C.
September 1992
Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1513
Academic Journal
Examines the characterization of epitaxially grown silicon layers using differences in boron diffusivity. Cause of reduced boron diffusivity; Dependence of boron diffusivity on the diffusion step conditions; Occurrence of diffusion enhancement under oxygen ambient; Impact of epitaxial material structure on boron diffusion.


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